STGYA120M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
$15.67
Available to order
Reference Price (USD)
1+
$11.98000
10+
$11.08300
100+
$9.50750
600+
$8.56250
1,200+
$7.95000
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STGYA120M65DF2
$15.67
Product details
The STGYA120M65DF2 from STMicroelectronics is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the STGYA120M65DF2 ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the STGYA120M65DF2 for your applications request a quote today.
General specs
- Product Status: Active
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 160 A
- Current - Collector Pulsed (Icm): 360 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 120A
- Power - Max: 625 W
- Switching Energy: 1.8mJ (on), 4.41mJ (off)
- Input Type: Standard
- Gate Charge: 420 nC
- Td (on/off) @ 25°C: 66ns/185ns
- Test Condition: 400V, 120A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 202 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Exposed Pad
- Supplier Device Package: MAX247™
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