STGW100H65FB2-4
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 1
$8.85
Available to order
Reference Price (USD)
1+
$8.85000
500+
$8.7615
1000+
$8.673
1500+
$8.5845
2000+
$8.496
2500+
$8.4075
Exquisite packaging
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STGW100H65FB2-4
$8.85
Product details
The STGW100H65FB2-4 from STMicroelectronics is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the STGW100H65FB2-4 ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the STGW100H65FB2-4 and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 145 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
- Power - Max: 441 W
- Switching Energy: 1.06mJ (on), 1.14mJ (off)
- Input Type: Standard
- Gate Charge: 288 nC
- Td (on/off) @ 25°C: 23ns/141ns
- Test Condition: 400V, 100A, 3.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
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