RJH60D1DPE-00#J3
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 20A 52W LDPAK
$2.70
Available to order
Reference Price (USD)
1+
$2.70000
500+
$2.673
1000+
$2.646
1500+
$2.619
2000+
$2.592
2500+
$2.565
Exquisite packaging
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RJH60D1DPE-00#J3
$2.70
Product details
The RJH60D1DPE-00#J3 from Renesas Electronics America Inc is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the RJH60D1DPE-00#J3 ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the RJH60D1DPE-00#J3 for your applications request a quote today.
General specs
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: 52 W
- Switching Energy: 100µJ (on), 130µJ (off)
- Input Type: Standard
- Gate Charge: 13 nC
- Td (on/off) @ 25°C: 30ns/42ns
- Test Condition: 300V, 10A, 5Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-83
- Supplier Device Package: LDPAK
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