STGWA75H65DFB2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 7
$6.12
Available to order
Reference Price (USD)
1+
$6.12000
500+
$6.0588
1000+
$5.9976
1500+
$5.9364
2000+
$5.8752
2500+
$5.814
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STGWA75H65DFB2
$6.12
Product details
The STGWA75H65DFB2 from STMicroelectronics is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the STGWA75H65DFB2 ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the STGWA75H65DFB2 and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 115 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Power - Max: 357 W
- Switching Energy: 1.428mJ (on), 1.05mJ (off)
- Input Type: Standard
- Gate Charge: 207 nC
- Td (on/off) @ 25°C: 28ns/100ns
- Test Condition: 400V, 75A, 2.2Ohm, 15V
- Reverse Recovery Time (trr): 88 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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