HGTD1N120BNS9A
onsemi
onsemi
IGBT 1200V 5.3A 60W TO252AA
$1.68
Available to order
Reference Price (USD)
2,500+
$0.70122
5,000+
$0.66976
Exquisite packaging
Discount
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EMS | 3-7 days |
onsemi HGTD1N120BNS9A is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
General specs
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 5.3 A
- Current - Collector Pulsed (Icm): 6 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A
- Power - Max: 60 W
- Switching Energy: 70µJ (on), 90µJ (off)
- Input Type: Standard
- Gate Charge: 14 nC
- Td (on/off) @ 25°C: 15ns/67ns
- Test Condition: 960V, 1A, 82Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA