RGCL60TS60DGC11
Rohm Semiconductor
Rohm Semiconductor
IGBT
$4.85
Available to order
Reference Price (USD)
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$4.85000
500+
$4.8015
1000+
$4.753
1500+
$4.7045
2000+
$4.656
2500+
$4.6075
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RGCL60TS60DGC11
$4.85
Product details
Experience unparalleled power control with the RGCL60TS60DGC11 single IGBT transistor by Rohm Semiconductor. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The RGCL60TS60DGC11 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the RGCL60TS60DGC11 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 48 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
- Power - Max: 111 W
- Switching Energy: 770µJ (on), 1.11mJ (off)
- Input Type: Standard
- Gate Charge: 68 nC
- Td (on/off) @ 25°C: 44ns/186ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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