STGW8M120DF3
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
$4.70
Available to order
Reference Price (USD)
1+
$4.09000
30+
$3.33133
120+
$3.05625
510+
$2.52002
1,020+
$2.16250
2,520+
$2.06625
5,010+
$1.99750
Exquisite packaging
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STGW8M120DF3
$4.70
Product details
Upgrade your power electronics with the STGW8M120DF3 single IGBT transistor from STMicroelectronics. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The STGW8M120DF3 features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the STGW8M120DF3 delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 32 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
- Power - Max: 167 W
- Switching Energy: 390µJ (on), 370µJ (Off)
- Input Type: Standard
- Gate Charge: 32 nC
- Td (on/off) @ 25°C: 20ns/126ns
- Test Condition: 600V, 8A, 33Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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