STGB40H65FB
STMicroelectronics
STMicroelectronics
IGBT BIPO 650V 40A D2PAK
$3.85
Available to order
Reference Price (USD)
1,000+
$1.99200
2,000+
$1.90800
Exquisite packaging
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STGB40H65FB
$3.85
Product details
The STGB40H65FB from STMicroelectronics is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the STGB40H65FB ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the STGB40H65FB for your applications request a quote today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 283 W
- Switching Energy: 498µJ (on), 363µJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 40ns/142ns
- Test Condition: 400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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