RGT50TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
IGBT 650V 48A 174W TO-247N
$3.34
Available to order
Reference Price (USD)
1+
$3.15000
10+
$2.83200
30+
$2.67767
120+
$2.32050
270+
$2.20152
510+
$1.97539
1,020+
$1.66600
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RGT50TS65DGC11
$3.34
Product details
The RGT50TS65DGC11 from Rohm Semiconductor is a premium single IGBT transistor designed for high-efficiency power switching. This discrete semiconductor product is perfect for applications in traction systems, uninterruptible power supplies, and industrial motor controls. With its superior thermal performance and low on-state voltage, the RGT50TS65DGC11 ensures optimal energy savings and extended operational life. Its rugged design withstands high current and voltage stresses, making it a reliable choice for critical power management tasks. Engineers will find its compatibility with various gate drivers a significant advantage. Discover the benefits of the RGT50TS65DGC11 for your next project request a quote today.
General specs
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 48 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Power - Max: 174 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 49 nC
- Td (on/off) @ 25°C: 27ns/88ns
- Test Condition: 400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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