RGTV60TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
650V 30A FIELD STOP TRENCH IGBT
$6.37
Available to order
Reference Price (USD)
1+
$5.01000
10+
$4.49600
25+
$4.25040
100+
$3.68360
450+
$3.49464
900+
$3.13574
1,350+
$2.64460
Exquisite packaging
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RGTV60TS65DGC11
$6.37
Product details
The RGTV60TS65DGC11 from Rohm Semiconductor is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the RGTV60TS65DGC11 ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the RGTV60TS65DGC11 for your applications request a quote today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 194 W
- Switching Energy: 570µJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 64 nC
- Td (on/off) @ 25°C: 33ns/105ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 95 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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