STB27NM60ND
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 21A D2PAK
$7.85
Available to order
Reference Price (USD)
1+
$7.85000
500+
$7.7715
1000+
$7.693
1500+
$7.6145
2000+
$7.536
2500+
$7.4575
Exquisite packaging
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STB27NM60ND
$7.85
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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