PHT6N06LT,135
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 55V 2.5A SOT223
$0.21
Available to order
Reference Price (USD)
1+
$0.21000
500+
$0.2079
1000+
$0.2058
1500+
$0.2037
2000+
$0.2016
2500+
$0.1995
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PHT6N06LT,135
$0.21
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
- Vgs (Max): ±13V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-73
- Package / Case: TO-261-4, TO-261AA
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