Shopping cart

Subtotal: $0.00

NVMFS5C430NLAFT1G

onsemi
NVMFS5C430NLAFT1G Preview
onsemi
MOSFET N-CH 40V 38A/200A 5DFN
$2.88
Available to order
Reference Price (USD)
1,500+
$0.75306
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi NVMFS5C430NLAFT1G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NVMFS5C430NLAFT1G

NVMFS5C430NLAFT1G

$2.88

Product details

Enhance your electronic designs with the NVMFS5C430NLAFT1G single MOSFET transistor from onsemi, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The NVMFS5C430NLAFT1G features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the NVMFS5C430NLAFT1G particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the NVMFS5C430NLAFT1G represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads

Viewed products

Vishay Siliconix

SI2307CDS-T1-E3

$0.00 (not set)
Infineon Technologies

BSC889N03MSG

$0.00 (not set)
Toshiba Semiconductor and Storage

SSM3K122TU,LF

$0.00 (not set)
Renesas Electronics America Inc

2SK2084L-E

$0.00 (not set)
Toshiba Semiconductor and Storage

TK40E06N1,S1X

$0.00 (not set)
IXYS

IXFA7N100P

$0.00 (not set)
Infineon Technologies

SPI07N65C3

$0.00 (not set)
Infineon Technologies

AUIRFR2905ZTR

$0.00 (not set)
IXYS

IXTQ160N10T

$0.00 (not set)
Fairchild Semiconductor

HUFA76609D3ST

$0.00 (not set)
Top