NE3512S02-T1C-A
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
$0.60
Available to order
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NE3512S02-T1C-A
$0.60
Product details
Optimize your RF applications with the NE3512S02-T1C-A RF MOSFET transistor from Renesas Electronics America Inc, a leader in discrete semiconductor products. This high-frequency transistor is designed for superior amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The NE3512S02-T1C-A handles high power levels with excellent thermal stability. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's robust design guarantees durability in tough conditions. Its compact size enables seamless integration into diverse electronic layouts. The NE3512S02-T1C-A is ideal for systems requiring reliable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G infrastructure, aerospace communication, and military electronics. It is also effective in consumer gadgets, automotive telematics, and industrial monitoring systems. The NE3512S02-T1C-A ensures consistent operation across various frequencies. Renesas Electronics America Inc has engineered this MOSFET to exceed industry expectations. For cutting-edge RF technology, the NE3512S02-T1C-A is an excellent selection. Improve your designs with this high-quality transistor. Request a quote or submit an inquiry online now. Depend on the NE3512S02-T1C-A from Renesas Electronics America Inc for superior RF solutions.
General specs
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 12GHz
- Gain: 13.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 70mA
- Noise Figure: 0.35dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: S02
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