BLC8G27LS-160AVU
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 14.3DB SOT12751
$72.64
Available to order
Reference Price (USD)
60+
$76.54650
Exquisite packaging
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BLC8G27LS-160AVU
$72.64
Product details
Optimize your RF applications with the BLC8G27LS-160AVU RF MOSFET transistor from Ampleon USA Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for superior amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The BLC8G27LS-160AVU handles high power levels with excellent thermal stability. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's robust design guarantees durability in tough conditions. Its compact size enables seamless integration into diverse electronic layouts. The BLC8G27LS-160AVU is ideal for systems requiring reliable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G infrastructure, aerospace communication, and military electronics. It is also effective in consumer gadgets, automotive telematics, and industrial monitoring systems. The BLC8G27LS-160AVU ensures consistent operation across various frequencies. Ampleon USA Inc. has engineered this MOSFET to exceed industry expectations. For cutting-edge RF technology, the BLC8G27LS-160AVU is an excellent selection. Improve your designs with this high-quality transistor. Request a quote or submit an inquiry online now. Depend on the BLC8G27LS-160AVU from Ampleon USA Inc. for superior RF solutions.
General specs
- Product Status: Last Time Buy
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.5GHz ~ 2.69GHz
- Gain: 14.3dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 250 mA
- Power - Output: 31.6W
- Voltage - Rated: 65 V
- Package / Case: SOT-1275-1
- Supplier Device Package: DFM6
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