A2G35S160-01SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$174.99
Available to order
Reference Price (USD)
250+
$116.37008
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A2G35S160-01SR3
$174.99
Product details
Upgrade your RF systems with the A2G35S160-01SR3 RF MOSFET transistor from NXP USA Inc., a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The A2G35S160-01SR3 offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the A2G35S160-01SR3 ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The A2G35S160-01SR3 ensures accurate and stable signal processing in all scenarios. NXP USA Inc. has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the A2G35S160-01SR3 is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the A2G35S160-01SR3 from NXP USA Inc. for superior RF performance.
General specs
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 3.4GHz ~ 3.6GHz
- Gain: 15.7dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 190 mA
- Power - Output: 51dBm
- Voltage - Rated: 125 V
- Package / Case: NI-400S-2S
- Supplier Device Package: NI-400S-2S
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