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NSVMUN5332DW1T3G

onsemi
NSVMUN5332DW1T3G Preview
onsemi
COMPLEMENTARY BIPOLAR DIGITAL TR
$0.28
Available to order
Reference Price (USD)
1+
$0.28000
500+
$0.2772
1000+
$0.2744
1500+
$0.2716
2000+
$0.2688
2500+
$0.266
Exquisite packaging
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onsemi NSVMUN5332DW1T3G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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NSVMUN5332DW1T3G

NSVMUN5332DW1T3G

$0.28

Product details

The NSVMUN5332DW1T3G from onsemi is a high-performance pre-biased bipolar junction transistor (BJT) array designed for efficient switching and amplification applications. This product is part of the Discrete Semiconductor Products category, specifically tailored for Transistors - Bipolar (BJT) - Arrays, Pre-Biased. It offers excellent thermal stability and consistent performance, making it ideal for various electronic circuits. The NSVMUN5332DW1T3G ensures reliable operation in compact designs, providing engineers with a versatile solution for their projects. With its robust construction and advanced technology, this BJT array is a must-have for modern electronics. Key features include integrated pre-biasing for simplified circuit design, low power consumption, and high gain. These transistors are perfect for applications requiring precise control and signal amplification. The NSVMUN5332DW1T3G is widely used in automotive electronics, industrial control systems, and consumer electronics. Its compact form factor and high reliability make it suitable for space-constrained applications. For pricing and availability, submit an inquiry today and let our team assist you with your specific requirements.

General specs

  • Product Status: Active
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363

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