NSVMUN5338DW1T3G
onsemi
onsemi
SS SC88A DUAL BRT TRPDBN
$0.10
Available to order
Reference Price (USD)
1+
$0.10344
500+
$0.1024056
1000+
$0.1013712
1500+
$0.1003368
2000+
$0.0993024
2500+
$0.098268
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
onsemi NSVMUN5338DW1T3G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NSVMUN5338DW1T3G
$0.10
Product details
Enhance your electronic designs with the NSVMUN5338DW1T3G from onsemi, a top-grade pre-biased bipolar junction transistor (BJT) array. This product is part of the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The NSVMUN5338DW1T3G is designed to deliver exceptional performance in amplification and switching applications, offering high reliability and efficiency. Its pre-biased configuration simplifies circuit design and enhances overall performance. The transistor array features excellent thermal management, ensuring stable operation in various environments. Perfect for power management systems, audio amplifiers, and sensor interfaces, the NSVMUN5338DW1T3G provides consistent and accurate results. It is also commonly used in medical devices, telecommunications equipment, and home automation systems. With its high gain and low power consumption, the NSVMUN5338DW1T3G is ideal for energy-efficient applications. The durable and compact design of this BJT array makes it a versatile choice for diverse projects. To learn more about how the NSVMUN5338DW1T3G can benefit your project, contact us for a detailed quote and expert technical support.
General specs
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms, 47kOhms
- Resistor - Emitter Base (R2): 10kOhms, 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Viewed products
