SMUN5216DW1T1G-M02
onsemi
onsemi
DUAL NPN BIPOLAR DIGITAL TRANSIS
$0.51
Available to order
Reference Price (USD)
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$0.51000
500+
$0.5049
1000+
$0.4998
1500+
$0.4947
2000+
$0.4896
2500+
$0.4845
Exquisite packaging
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SMUN5216DW1T1G-M02
$0.51
Product details
The SMUN5216DW1T1G-M02 by onsemi is a high-performance pre-biased bipolar junction transistor (BJT) array, categorized under Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is engineered to excel in a variety of electronic applications, ensuring reliability and efficiency. The SMUN5216DW1T1G-M02 features integrated pre-biasing, reducing the need for external components and streamlining design. Its outstanding thermal stability guarantees consistent operation under different conditions. This BJT array is ideal for signal amplification, load switching, and interface circuits. The SMUN5216DW1T1G-M02 is also widely used in industrial automation, consumer electronics, and telecommunication systems. With its high gain and low noise characteristics, it is perfect for precision and sensitive applications. The compact and robust design of the SMUN5216DW1T1G-M02 makes it suitable for both mass production and specialized projects. Engineers and designers can trust this transistor array for its consistent quality and performance. For more details on the SMUN5216DW1T1G-M02 and to obtain a personalized quote, please submit an inquiry and our team will assist you promptly.
General specs
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): -
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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