NSBA114TDXV6T5G
onsemi
onsemi
TRANS PREBIAS 2PNP 50V SOT563
$0.05
Available to order
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500+
$0.0495
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$0.049
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$0.0485
2000+
$0.048
2500+
$0.0475
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NSBA114TDXV6T5G
$0.05
Product details
Explore the NSBA114TDXV6T5G from onsemi, a premium pre-biased bipolar junction transistor (BJT) array in the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed for superior performance in amplification and switching applications, delivering unmatched reliability and efficiency. The NSBA114TDXV6T5G features built-in pre-biasing, simplifying circuit design and improving functionality. Its excellent thermal properties ensure stable operation across a broad temperature range. Ideal for automotive electronics, audio systems, and power supplies, the NSBA114TDXV6T5G provides consistent and precise performance. This transistor array is also commonly found in aerospace applications, security systems, and wearable devices. With high gain and low power consumption, the NSBA114TDXV6T5G is perfect for energy-sensitive designs. The durable and compact construction of this BJT array makes it a cost-effective choice for various projects. To discover how the NSBA114TDXV6T5G can meet your specific needs, request a quote today and our specialists will provide you with comprehensive support.
General specs
- Product Status: Last Time Buy
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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