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RN2701JE(TE85L,F)

Toshiba Semiconductor and Storage
RN2701JE(TE85L,F) Preview
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ESV
$0.49
Available to order
Reference Price (USD)
4,000+
$0.08820
8,000+
$0.07938
12,000+
$0.07056
28,000+
$0.06615
100,000+
$0.05880
Exquisite packaging
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Toshiba Semiconductor and Storage RN2701JE(TE85L,F) is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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RN2701JE(TE85L,F)

RN2701JE(TE85L,F)

$0.49

Product details

Explore the RN2701JE(TE85L,F) from Toshiba Semiconductor and Storage, a premium pre-biased bipolar junction transistor (BJT) array in the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed for superior performance in amplification and switching applications, delivering unmatched reliability and efficiency. The RN2701JE(TE85L,F) features built-in pre-biasing, simplifying circuit design and improving functionality. Its excellent thermal properties ensure stable operation across a broad temperature range. Ideal for automotive electronics, audio systems, and power supplies, the RN2701JE(TE85L,F) provides consistent and precise performance. This transistor array is also commonly found in aerospace applications, security systems, and wearable devices. With high gain and low power consumption, the RN2701JE(TE85L,F) is perfect for energy-sensitive designs. The durable and compact construction of this BJT array makes it a cost-effective choice for various projects. To discover how the RN2701JE(TE85L,F) can meet your specific needs, request a quote today and our specialists will provide you with comprehensive support.

General specs

  • Product Status: Active
  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV

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