Shopping cart

Subtotal: $0.00

MUN5330DW1T1G

onsemi
MUN5330DW1T1G Preview
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
$0.28
Available to order
Reference Price (USD)
3,000+
$0.04334
6,000+
$0.03789
15,000+
$0.03244
30,000+
$0.03062
75,000+
$0.02880
150,000+
$0.02578
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi MUN5330DW1T1G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
MUN5330DW1T1G

MUN5330DW1T1G

$0.28

Product details

Upgrade your electronic projects with the MUN5330DW1T1G from onsemi, a superior pre-biased bipolar junction transistor (BJT) array. This product belongs to the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The MUN5330DW1T1G is designed to deliver high performance in amplification and switching tasks, offering reliability and efficiency. Its pre-biased configuration reduces circuit complexity and enhances functionality. The transistor array boasts excellent thermal management, ensuring stable performance in various environments. Perfect for use in power converters, audio amplifiers, and sensor circuits, the MUN5330DW1T1G provides consistent and accurate results. It is also commonly utilized in automotive electronics, medical devices, and smart home systems. With its high gain and low power consumption, the MUN5330DW1T1G is ideal for energy-efficient applications. The robust and compact design of this BJT array makes it a versatile choice for diverse projects. To learn more about the MUN5330DW1T1G and how it can benefit your designs, contact us for a detailed quote and expert advice.

General specs

  • Product Status: Active
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1kOhms
  • Resistor - Emitter Base (R2): 1kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363

Viewed products

onsemi

NSBC114YPDXV6T5G

$0.00 (not set)
Toshiba Semiconductor and Storage

RN2701JE(TE85L,F)

$0.00 (not set)
onsemi

NSVMUN5312DW1T2G

$0.00 (not set)
Toshiba Semiconductor and Storage

RN2504(TE85L,F)

$0.00 (not set)
onsemi

NSBC114EDP6T5G

$0.00 (not set)
Toshiba Semiconductor and Storage

RN2712JE(TE85L,F)

$0.00 (not set)
Rohm Semiconductor

FMG1AT148

$0.00 (not set)
Nexperia USA Inc.

PRMD13Z

$0.00 (not set)
onsemi

NSBC114EPDXVT1G

$0.00 (not set)
Nexperia USA Inc.

PBLS4005D,115

$0.00 (not set)
Top