NGTB25N120FL2WG
onsemi
onsemi
IGBT FIELD STOP 1200V 50A TO247
$5.06
Available to order
Reference Price (USD)
1+
$5.48000
30+
$4.68433
120+
$4.08267
510+
$3.50104
1,020+
$2.97960
Exquisite packaging
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NGTB25N120FL2WG
$5.06
Product details
Experience unparalleled power control with the NGTB25N120FL2WG single IGBT transistor by onsemi. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The NGTB25N120FL2WG boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the NGTB25N120FL2WG offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
- Power - Max: 385 W
- Switching Energy: 1.95mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 178 nC
- Td (on/off) @ 25°C: 87ns/179ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 154 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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