NSVMUN5336DW1T1G
onsemi
onsemi
COMPLEMENTARY DIGITAL TRA
$0.13
Available to order
Reference Price (USD)
3,000+
$0.09999
Exquisite packaging
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NSVMUN5336DW1T1G
$0.13
Product details
The NSVMUN5336DW1T1G by onsemi is a high-quality pre-biased bipolar junction transistor (BJT) array, categorized under Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed to provide exceptional performance in various electronic applications, ensuring reliability and efficiency. The NSVMUN5336DW1T1G features integrated pre-biasing, which minimizes external components and simplifies design. Its excellent thermal stability guarantees consistent operation under diverse conditions. This BJT array is ideal for applications such as signal amplification, load switching, and interface circuits. The NSVMUN5336DW1T1G is also widely used in industrial automation, consumer electronics, and telecommunications. With its high gain and low noise performance, it is perfect for sensitive and precision-driven tasks. The compact and durable design of the NSVMUN5336DW1T1G makes it suitable for both high-volume and specialized applications. Engineers and designers can rely on this transistor array for its consistent quality and performance. For more information on the NSVMUN5336DW1T1G and to receive a customized quote, please submit an inquiry and our team will respond promptly.
General specs
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 187mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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