NSVMUN5312DW1T2G
onsemi
onsemi
TRANS NPN/PNP 50V BIPO SC88-6
$0.41
Available to order
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NSVMUN5312DW1T2G
$0.41
Product details
The NSVMUN5312DW1T2G by onsemi is a high-performance pre-biased bipolar junction transistor (BJT) array, categorized under Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is engineered to excel in a variety of electronic applications, ensuring reliability and efficiency. The NSVMUN5312DW1T2G features integrated pre-biasing, reducing the need for external components and streamlining design. Its outstanding thermal stability guarantees consistent operation under different conditions. This BJT array is ideal for signal amplification, load switching, and interface circuits. The NSVMUN5312DW1T2G is also widely used in industrial automation, consumer electronics, and telecommunication systems. With its high gain and low noise characteristics, it is perfect for precision and sensitive applications. The compact and robust design of the NSVMUN5312DW1T2G makes it suitable for both mass production and specialized projects. Engineers and designers can trust this transistor array for its consistent quality and performance. For more details on the NSVMUN5312DW1T2G and to obtain a personalized quote, please submit an inquiry and our team will assist you promptly.
General specs
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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