CLF1G0060S-10
NXP USA Inc.
NXP USA Inc.
RF PFET, 1-ELEMENT, C BAND, GALL
$77.25
Available to order
Reference Price (USD)
1+
$77.25000
500+
$76.4775
1000+
$75.705
1500+
$74.9325
2000+
$74.16
2500+
$73.3875
Exquisite packaging
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CLF1G0060S-10
$77.25
Product details
Enhance your RF circuitry with the CLF1G0060S-10 RF MOSFET transistor from NXP USA Inc., a standout in the discrete semiconductor products market. This transistor is specifically designed for high-frequency applications, offering unmatched performance and reliability. The CLF1G0060S-10 features advanced FET technology that ensures low noise and high gain, critical for sensitive RF systems. Its efficient power handling capabilities make it suitable for both transmitting and receiving applications. The transistor's robust design guarantees long-term stability and durability. With excellent thermal characteristics, the CLF1G0060S-10 maintains performance even under continuous operation. Its compact form factor allows for seamless integration into space-constrained designs. The CLF1G0060S-10 is perfect for applications requiring precise signal amplification and control. Key benefits include superior switching speed, minimal signal loss, and high impedance matching. These features make it ideal for use in telecommunications infrastructure, satellite communication systems, and military-grade electronics. Additionally, it is well-suited for IoT devices, test and measurement equipment, and aerospace applications. The CLF1G0060S-10 delivers consistent results across diverse operating environments. Engineers can rely on its precision and efficiency for critical RF tasks. NXP USA Inc. has engineered this MOSFET to meet the highest industry standards. For projects demanding top-tier RF performance, the CLF1G0060S-10 is an excellent choice. Don't miss the opportunity to incorporate this high-quality transistor into your designs. Visit our website to request a quote or submit an inquiry today. Experience the difference with the CLF1G0060S-10 from NXP USA Inc..
General specs
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 6GHz
- Gain: 16dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 50 mA
- Power - Output: 10W
- Voltage - Rated: 150 V
- Package / Case: SOT-1227B
- Supplier Device Package: SOT1227B
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