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NE55410GR-T3-AZ

Renesas Electronics America Inc
NE55410GR-T3-AZ Preview
Renesas Electronics America Inc
RF POWER N-CHANNEL, MOSFET
$4.82
Available to order
Reference Price (USD)
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$4.82000
500+
$4.7718
1000+
$4.7236
1500+
$4.6754
2000+
$4.6272
2500+
$4.579
Exquisite packaging
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Renesas Electronics America Inc NE55410GR-T3-AZ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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NE55410GR-T3-AZ

NE55410GR-T3-AZ

$4.82

Product details

Maximize your RF capabilities with the NE55410GR-T3-AZ RF MOSFET transistor from Renesas Electronics America Inc, a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The NE55410GR-T3-AZ handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The NE55410GR-T3-AZ is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The NE55410GR-T3-AZ ensures consistent operation across a wide frequency range. Renesas Electronics America Inc has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the NE55410GR-T3-AZ is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the NE55410GR-T3-AZ from Renesas Electronics America Inc for superior RF solutions.

General specs

  • Product Status: Obsolete
  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 13.5dB
  • Voltage - Test: 28 V
  • Current Rating (Amps): 250mA, 1A
  • Noise Figure: -
  • Current - Test: 20 mA
  • Power - Output: 35.4dBm
  • Voltage - Rated: 65 V
  • Package / Case: 16-DFF, Exposed Pad
  • Supplier Device Package: 16-HTSSOP

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