BLF8G27LS-100J
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
$66.15
Available to order
Reference Price (USD)
100+
$55.72370
Exquisite packaging
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BLF8G27LS-100J
$66.15
Product details
Upgrade your RF systems with the BLF8G27LS-100J RF MOSFET transistor from Ampleon USA Inc., a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The BLF8G27LS-100J offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the BLF8G27LS-100J ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The BLF8G27LS-100J ensures accurate and stable signal processing in all scenarios. Ampleon USA Inc. has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the BLF8G27LS-100J is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the BLF8G27LS-100J from Ampleon USA Inc. for superior RF performance.
General specs
- Product Status: Last Time Buy
- Transistor Type: LDMOS
- Frequency: 2.5GHz ~ 2.7GHz
- Gain: 17dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 900 mA
- Power - Output: 25W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
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