PMGD290XN,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.86A 6TSSOP
$0.46
Available to order
Reference Price (USD)
3,000+
$0.10890
6,000+
$0.10230
15,000+
$0.09570
30,000+
$0.08778
75,000+
$0.08448
Exquisite packaging
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| EMS | 3-7 days |
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PMGD290XN,115
$0.46
Product details
The PMGD290XN,115 from Nexperia USA Inc. is a high-efficiency MOSFET array in the Discrete Semiconductor Products category, part of the Transistors - FETs, MOSFETs - Arrays subcategory. This product is designed for applications requiring high power density and reliable performance.\n\nKey features of the PMGD290XN,115 include low on-resistance, fast switching, and superior thermal characteristics. The array format integrates multiple transistors, simplifying design and saving board space. Its robust construction ensures durability in challenging environments.\n\nIdeal uses include electric vehicle power systems, industrial controls, and consumer electronics. Electric vehicle power systems benefit from its high current handling and efficiency. Industrial controls utilize its reliability for precise operation. Consumer electronics rely on its compact design and performance.\n\nEnhance your designs with the PMGD290XN,115. Request a quote today to explore how this MOSFET array can meet your requirements. Our team is here to provide the support you need.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 860mA
- Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 20V
- Power - Max: 410mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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