MSCSM120HM31CT3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP3F
$285.97
Available to order
Reference Price (USD)
1+
$285.97000
500+
$283.1103
1000+
$280.2506
1500+
$277.3909
2000+
$274.5312
2500+
$271.6715
Exquisite packaging
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MSCSM120HM31CT3AG
$285.97
Product details
General specs
- Product Status: Active
- FET Type: 4 N-Channel
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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