MSCSM120HM31CT3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP3F
$285.97
Available to order
Reference Price (USD)
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$285.97000
500+
$283.1103
1000+
$280.2506
1500+
$277.3909
2000+
$274.5312
2500+
$271.6715
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MSCSM120HM31CT3AG
$285.97
Product details
The MSCSM120HM31CT3AG by Microchip Technology is a top-tier MOSFET array in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product is perfect for applications requiring high power efficiency and compact design, offering exceptional performance and reliability.\n\nKey attributes of the MSCSM120HM31CT3AG include minimal conduction losses, high switching speed, and superior thermal management. The array configuration allows for efficient use of PCB space while maintaining high performance. Its design ensures compatibility with a variety of driving circuits, making it highly versatile.\n\nIdeal applications include robotics, consumer electronics, and aerospace systems. In robotics, it provides precise motor control and power management. Consumer electronics benefit from its efficiency and compact size. Aerospace systems rely on its reliability under extreme conditions.\n\nEnhance your designs with the MSCSM120HM31CT3AG. Contact us for pricing and availability details. Our experts are ready to help you find the perfect solution for your needs.
General specs
- Product Status: Active
- FET Type: 4 N-Channel
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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