PJQ5606_R2_00001
Panjit International Inc.
Panjit International Inc.
30V COMPLEMENTARY ENHANCEMENT MO
$0.83
Available to order
Reference Price (USD)
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$0.83000
500+
$0.8217
1000+
$0.8134
1500+
$0.8051
2000+
$0.7968
2500+
$0.7885
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PJQ5606_R2_00001
$0.83
Product details
The PJQ5606_R2_00001 from Panjit International Inc. is a high-performance MOSFET array designed for efficient power management in compact electronic systems. This product is part of the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays, offering reliable switching capabilities and low power dissipation. Ideal for applications requiring multiple FETs in a single package, the PJQ5606_R2_00001 ensures enhanced circuit density and simplified design.\n\nKey features of the PJQ5606_R2_00001 include optimized gate charge for fast switching, low on-resistance for reduced conduction losses, and excellent thermal performance. The array configuration allows for seamless integration into designs needing multiple transistors, saving board space and improving overall system efficiency. With robust construction and high reliability, this MOSFET array is suitable for demanding environments.\n\nThe PJQ5606_R2_00001 is widely used in power supplies, motor control systems, and audio amplifiers. In power supplies, it enables efficient voltage regulation and energy conversion. For motor control, it provides precise switching for smooth operation. Audio amplifiers benefit from its low distortion and high fidelity performance.\n\nReady to integrate the PJQ5606_R2_00001 into your next project? Submit an inquiry today to get pricing and availability details. Our team is here to assist with your procurement needs.
General specs
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
- Power - Max: 1.7W (Ta), 21W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: DFN5060B-8
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