MSCSM170AM11CT3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP3F
$567.84
Available to order
Reference Price (USD)
1+
$567.84000
500+
$562.1616
1000+
$556.4832
1500+
$550.8048
2000+
$545.1264
2500+
$539.448
Exquisite packaging
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MSCSM170AM11CT3AG
$567.84
Product details
General specs
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
- Power - Max: 1.14kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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