Shopping cart

Subtotal: $0.00

IRFHM8363TRPBF

Infineon Technologies
IRFHM8363TRPBF Preview
Infineon Technologies
MOSFET 2N-CH 30V 11A 8PQFN
$1.26
Available to order
Reference Price (USD)
4,000+
$0.38500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IRFHM8363TRPBF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IRFHM8363TRPBF

IRFHM8363TRPBF

$1.26

Product details

The IRFHM8363TRPBF by Infineon Technologies is a premium MOSFET array in the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays. This product is engineered for high-efficiency power switching, making it ideal for advanced electronic systems.\n\nNotable features of the IRFHM8363TRPBF include optimized switching performance, low on-resistance, and excellent thermal conductivity. The array configuration allows for compact and efficient designs, reducing overall system complexity. Its high reliability ensures long-term performance in various applications.\n\nApplications include data centers, automotive infotainment, and portable devices. Data centers benefit from its efficiency in power distribution. Automotive infotainment systems rely on its performance for audio and display controls. Portable devices utilize its compact size and low power consumption.\n\nExplore the benefits of the IRFHM8363TRPBF. Request a quote today to learn more about how it can enhance your designs. Our team is ready to assist with your technical and procurement needs.

General specs

  • Product Status: Not For New Designs
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A
  • Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
  • Power - Max: 2.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-PQFN (3.3x3.3), Power33

Viewed products

Toshiba Semiconductor and Storage

SSM6N813R,LF

$0.00 (not set)
onsemi

EFC4C012NLTDG

$0.00 (not set)
Microchip Technology

MSCSM70TLM44C3AG

$0.00 (not set)
Diodes Incorporated

DMC1018UPDWQ-13

$0.00 (not set)
Microchip Technology

MSCSM170AM058CT6LIAG

$0.00 (not set)
Microchip Technology

APTC80AM75SCG

$0.00 (not set)
Diodes Incorporated

DMP2900UW-13

$0.00 (not set)
Microchip Technology

MSCSM120TLM11CAG

$0.00 (not set)
Microchip Technology

APTM100H46FT3G

$0.00 (not set)
Microchip Technology

APTM50AM38SCTG

$0.00 (not set)
Top