MSCSM120TLM11CAG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP6C
$854.18
Available to order
Reference Price (USD)
1+
$854.18000
500+
$845.6382
1000+
$837.0964
1500+
$828.5546
2000+
$820.0128
2500+
$811.471
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MSCSM120TLM11CAG
$854.18
Product details
General specs
- Product Status: Active
- FET Type: 4 N-Channel (Three Level Inverter)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
- Power - Max: 1042W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C
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