IPU95R750P7AKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 950V 9A TO251-3
$2.47
Available to order
Reference Price (USD)
1+
$2.08000
10+
$1.88900
100+
$1.53900
500+
$1.22140
1,000+
$1.03084
Exquisite packaging
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IPU95R750P7AKMA1
$2.47
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 220µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 73W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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