IXTA120P065T
IXYS
IXYS
MOSFET P-CH 65V 120A TO263
$7.10
Available to order
Reference Price (USD)
50+
$3.93760
Exquisite packaging
Discount
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| EMS | 3-7 days |
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IXTA120P065T
$7.10
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 65 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 298W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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