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SIA817EDJ-T1-GE3

Vishay Siliconix
SIA817EDJ-T1-GE3 Preview
Vishay Siliconix
MOSFET P-CH 30V 4.5A PPAK SC70-6
$0.53
Available to order
Reference Price (USD)
3,000+
$0.19855
6,000+
$0.18645
15,000+
$0.17435
30,000+
$0.16588
Exquisite packaging
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Vishay Siliconix SIA817EDJ-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SIA817EDJ-T1-GE3

SIA817EDJ-T1-GE3

$0.53

Product details

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-70-6 Dual
  • Package / Case: PowerPAK® SC-70-6 Dual

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