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IPG20N10S436AATMA1

Infineon Technologies
IPG20N10S436AATMA1 Preview
Infineon Technologies
MOSFET 2N-CH 100V 20A 8TDSON
$1.45
Available to order
Reference Price (USD)
5,000+
$0.64401
Exquisite packaging
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IPG20N10S436AATMA1

IPG20N10S436AATMA1

$1.45

Product details

General specs

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 16µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
  • Power - Max: 43W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10

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