IPG20N10S4L35ATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 8TDSON
$1.49
Available to order
Reference Price (USD)
5,000+
$0.47226
10,000+
$0.45450
Exquisite packaging
Discount
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies IPG20N10S4L35ATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IPG20N10S4L35ATMA1
$1.49
Product details
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 16µA
- Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
- Power - Max: 43W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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