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SSM6P35AFU,LF

Toshiba Semiconductor and Storage
SSM6P35AFU,LF Preview
Toshiba Semiconductor and Storage
SMALL SIGNAL MOSFET P-CH X 2 VDS
$0.10
Available to order
Reference Price (USD)
3,000+
$0.09000
6,000+
$0.08500
15,000+
$0.07750
30,000+
$0.07250
75,000+
$0.07000
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Toshiba Semiconductor and Storage SSM6P35AFU,LF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SSM6P35AFU,LF

SSM6P35AFU,LF

$0.10

Product details

Discover the SSM6P35AFU,LF from Toshiba Semiconductor and Storage, a high-efficiency MOSFET array in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - Arrays subcategory, this product is engineered for applications demanding high power density and reliability. Its advanced design ensures optimal performance in a wide range of electronic systems.\n\nThe SSM6P35AFU,LF features low on-resistance, fast switching characteristics, and excellent thermal stability. The array format simplifies circuit design by consolidating multiple FETs, reducing board space and improving system efficiency. With superior electrical performance, it meets the needs of high-performance applications.\n\nCommon uses include server power supplies, electric vehicle charging stations, and medical equipment. Server power supplies benefit from its high efficiency and reliability. EV charging stations utilize its robust performance for safe and fast charging. Medical equipment relies on its precision and durability for critical operations.\n\nGet started with the SSM6P35AFU,LF today. Request a quote to explore how this MOSFET array can meet your project requirements. Our support team is here to assist you every step of the way.

General specs

  • Product Status: Active
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
  • Power - Max: 285mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6

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