IKD10N60RC2ATMA1
Infineon Technologies
Infineon Technologies
IKD10N60RC2ATMA1
$1.55
Available to order
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IKD10N60RC2ATMA1
$1.55
Product details
The IKD10N60RC2ATMA1 from Infineon Technologies is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the IKD10N60RC2ATMA1 ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the IKD10N60RC2ATMA1 and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 18.8 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
- Power - Max: 79 W
- Switching Energy: 320µJ (on), 170µJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: 14ns/250ns
- Test Condition: 400V, 10A, 49Ohm, 15V
- Reverse Recovery Time (trr): 104 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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