RGS80TSX2GC11
Rohm Semiconductor
Rohm Semiconductor
10US SHORT-CIRCUIT TOLERANCE, 12
$10.65
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RGS80TSX2GC11
$10.65
Product details
Maximize power efficiency with the RGS80TSX2GC11 single IGBT transistor by Rohm Semiconductor. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The RGS80TSX2GC11 features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the RGS80TSX2GC11 delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 555 W
- Switching Energy: 3mJ (on), 3.1mJ (off)
- Input Type: Standard
- Gate Charge: 104 nC
- Td (on/off) @ 25°C: 49ns/199ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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