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FGB7N60UNDF

Fairchild Semiconductor
FGB7N60UNDF Preview
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.03
Available to order
Reference Price (USD)
800+
$1.41671
Exquisite packaging
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Fairchild Semiconductor FGB7N60UNDF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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FGB7N60UNDF

FGB7N60UNDF

$1.03

Product details

The FGB7N60UNDF from Fairchild Semiconductor is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the FGB7N60UNDF ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the FGB7N60UNDF for your applications request a quote today.

General specs

  • Product Status: Active
  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 14 A
  • Current - Collector Pulsed (Icm): 21 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 7A
  • Power - Max: 83 W
  • Switching Energy: 99µJ (on), 104µJ (off)
  • Input Type: Standard
  • Gate Charge: 18 nC
  • Td (on/off) @ 25°C: 5.9ns/32.3ns
  • Test Condition: 400V, 7A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 32.3 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK (TO-263)

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