FGB7N60UNDF
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.03
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Reference Price (USD)
800+
$1.41671
Exquisite packaging
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FGB7N60UNDF
$1.03
Product details
The FGB7N60UNDF from Fairchild Semiconductor is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the FGB7N60UNDF ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the FGB7N60UNDF for your applications request a quote today.
General specs
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 14 A
- Current - Collector Pulsed (Icm): 21 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 7A
- Power - Max: 83 W
- Switching Energy: 99µJ (on), 104µJ (off)
- Input Type: Standard
- Gate Charge: 18 nC
- Td (on/off) @ 25°C: 5.9ns/32.3ns
- Test Condition: 400V, 7A, 10Ohm, 15V
- Reverse Recovery Time (trr): 32.3 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)
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