IHW40N65R5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 80A TO247-3
$4.15
Available to order
Reference Price (USD)
1+
$4.31000
10+
$3.87100
240+
$3.17200
720+
$2.70025
1,200+
$2.27733
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IHW40N65R5XKSA1
$4.15
Product details
The IHW40N65R5XKSA1 from Infineon Technologies is a premium single IGBT transistor designed for high-efficiency power switching. This discrete semiconductor product is perfect for applications in traction systems, uninterruptible power supplies, and industrial motor controls. With its superior thermal performance and low on-state voltage, the IHW40N65R5XKSA1 ensures optimal energy savings and extended operational life. Its rugged design withstands high current and voltage stresses, making it a reliable choice for critical power management tasks. Engineers will find its compatibility with various gate drivers a significant advantage. Discover the benefits of the IHW40N65R5XKSA1 for your next project request a quote today.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
- Power - Max: 230 W
- Switching Energy: 630µJ (on), 140µJ (off)
- Input Type: Standard
- Gate Charge: 193 nC
- Td (on/off) @ 25°C: 30ns/258ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 90 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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