APT35GN120L2DQ2G
Microchip Technology
Microchip Technology
IGBT 1200V 94A 379W TO264
$10.78
Available to order
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$13.01000
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$11.71100
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$10.67040
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$9.62940
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$8.84860
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$8.06784
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$7.02683
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APT35GN120L2DQ2G
$10.78
Product details
Experience unparalleled power control with the APT35GN120L2DQ2G single IGBT transistor by Microchip Technology. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The APT35GN120L2DQ2G boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the APT35GN120L2DQ2G offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 94 A
- Current - Collector Pulsed (Icm): 105 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
- Power - Max: 379 W
- Switching Energy: 2.315mJ (off)
- Input Type: Standard
- Gate Charge: 220 nC
- Td (on/off) @ 25°C: 24ns/300ns
- Test Condition: 800V, 35A, 2.2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: -
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