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STGWT60H65DFB

STMicroelectronics
STGWT60H65DFB Preview
STMicroelectronics
IGBT 650V 80A 375W TO3P-3L
$5.35
Available to order
Reference Price (USD)
1+
$5.57000
30+
$4.72500
120+
$4.09500
510+
$3.48600
1,020+
$2.94000
2,520+
$2.80000
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STGWT60H65DFB

STGWT60H65DFB

$5.35

Product details

Enhance your power control systems with the STGWT60H65DFB single IGBT transistor from STMicroelectronics. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The STGWT60H65DFB is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the STGWT60H65DFB offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.

General specs

  • Product Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 240 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
  • Power - Max: 375 W
  • Switching Energy: 1.09mJ (on), 626µJ (off)
  • Input Type: Standard
  • Gate Charge: 306 nC
  • Td (on/off) @ 25°C: 51ns/160ns
  • Test Condition: 400V, 60A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 60 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P

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