Shopping cart

Subtotal: $0.00

DCX143EU-7-F

Diodes Incorporated
DCX143EU-7-F Preview
Diodes Incorporated
TRANS PREBIAS NPN/PNP SOT363
$0.37
Available to order
Reference Price (USD)
3,000+
$0.06538
6,000+
$0.05750
15,000+
$0.04963
30,000+
$0.04700
75,000+
$0.04438
150,000+
$0.04000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Diodes Incorporated DCX143EU-7-F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
DCX143EU-7-F

DCX143EU-7-F

$0.37

Product details

The DCX143EU-7-F by Diodes Incorporated is a cutting-edge pre-biased bipolar junction transistor (BJT) array, part of the Discrete Semiconductor Products family under Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed to meet the needs of modern electronics, offering high efficiency and reliability. The DCX143EU-7-F features integrated pre-biasing, which streamlines circuit design and reduces component count. Its excellent thermal performance ensures consistent operation even in challenging environments. This BJT array is perfect for applications such as motor control, LED drivers, and power supplies. The DCX143EU-7-F provides high gain and low saturation voltage, making it ideal for precision tasks. It is also widely used in renewable energy systems, robotics, and IoT devices. The compact and robust design of the DCX143EU-7-F makes it suitable for both industrial and consumer applications. For engineers looking for a dependable and high-performance transistor array, the DCX143EU-7-F is an excellent choice. Submit your inquiry now to get detailed information on pricing and delivery options tailored to your needs.

General specs

  • Product Status: Active
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V / 40 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363

Viewed products

Toshiba Semiconductor and Storage

RN2903FE,LXHF(CT

$0.00 (not set)
Toshiba Semiconductor and Storage

RN1710JE(TE85L,F)

$0.00 (not set)
Toshiba Semiconductor and Storage

RN1601(TE85L,F)

$0.00 (not set)
Nexperia USA Inc.

PUMD10,125

$0.00 (not set)
Rohm Semiconductor

UMH9NFHATN

$0.00 (not set)
Toshiba Semiconductor and Storage

RN2506(TE85L,F)

$0.00 (not set)
onsemi

NSVBC114YDXV6T1G

$0.00 (not set)
Rohm Semiconductor

EMG8T2R

$0.00 (not set)
Toshiba Semiconductor and Storage

RN4906FE,LXHF(CT

$0.00 (not set)
Diodes Incorporated

DDA143EH-7

$0.00 (not set)
Top