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HGTD3N60B3S

Harris Corporation
HGTD3N60B3S Preview
Harris Corporation
7A, 600V, UFS N-CHANNEL IGBT
$0.48
Available to order
Reference Price (USD)
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500+
$0.4752
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$0.4704
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$0.4656
2000+
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$0.456
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Harris Corporation HGTD3N60B3S is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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HGTD3N60B3S

HGTD3N60B3S

$0.48

Product details

Optimize your power electronics with the HGTD3N60B3S single IGBT transistor from Harris Corporation. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The HGTD3N60B3S is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the HGTD3N60B3S can enhance your next project request a quote now.

General specs

  • Product Status: Active
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 7 A
  • Current - Collector Pulsed (Icm): 20 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
  • Power - Max: 33.3 W
  • Switching Energy: 66µJ (on), 88µJ (off)
  • Input Type: Standard
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 18ns/105ns
  • Test Condition: 480V, 3.5A, 82Ohm, 15V
  • Reverse Recovery Time (trr): 16 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-3 (DPAK)

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