FGH4L40T120LQD
onsemi
onsemi
1200V 40A FSIII IGBT LOW VCESAT
$8.84
Available to order
Reference Price (USD)
1+
$8.84000
500+
$8.7516
1000+
$8.6632
1500+
$8.5748
2000+
$8.4864
2500+
$8.398
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Product details
The FGH4L40T120LQD from onsemi is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the FGH4L40T120LQD ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the FGH4L40T120LQD for your applications request a quote today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
- Power - Max: 306 W
- Switching Energy: 1.04mJ (on), 1.35mJ (off)
- Input Type: Standard
- Gate Charge: 227 nC
- Td (on/off) @ 25°C: 42ns/218ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 59 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4L