GT40WR21,Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DISCRETE IGBT TRANSISTOR TO-3PN(
$8.48
Available to order
Reference Price (USD)
1+
$8.48120
500+
$8.396388
1000+
$8.311576
1500+
$8.226764
2000+
$8.141952
2500+
$8.05714
Exquisite packaging
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Product details
The GT40WR21,Q from Toshiba Semiconductor and Storage is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the GT40WR21,Q ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the GT40WR21,Q and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -